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TSV Helps Samsung to Dramatically Increase Memory Density
Samsung Electronics Announces Development Using Through Silicon Via (TSV) Technology. This achievement is reported to help soon create memory modules that will surpass existing designs in terms of size, speed and power consumption.
The “packaging” of the new memory, formed at the wafer-level-processed stacked package (WSP), consists of four 512 Mbit DDR2 DRAM chips – in other words, the final density is 2 Gbit. Using 2Gb TSV products, Samsung can create first 4GB DIMMs using WSP technology.
In the MCP memory released today, the chips are interconnected by wire conductors in the space between them. In the case of WSP, microscopic holes are “cut out” by a laser beam directly in the thickness of the silicon, which, when filled with a conductor (copper), eliminate the need to leave gaps between the chips to lay the conductors on the sides. According to Samsung, this makes it possible to create more compact chips.
Special measures have also helped to improve performance and reduce power consumption of the new memory.
Recall that IBM recently announced its success in TSV technology.